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AP4409AGEM PDF预览

AP4409AGEM

更新时间: 2024-11-17 06:37:19
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 181K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4409AGEM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:35 V最大漏极电流 (ID):14.5 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4409AGEM 数据手册

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AP4409AGEM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-35V  
D
D
D
Low On-resistance  
7.5mΩ  
-14.5A  
Fast Switching Characteristic  
G
S
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-35  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3a  
Continuous Drain Current3a  
Pulsed Drain Current1  
-14.5  
-12  
A
A
-50  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3a  
/W  
Data and specifications subject to change without notice  
1
200801091  

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