Datasheet > AP4409AGEH

AP4409AGEH

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	105K
描述
TO-252

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中文翻译

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数据手册

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AP4409AGEH 数据手册

AP4409AGEH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

-35V

8mΩ

-85A

▼ Lower On-resistance

R_DS(ON)

▼ Fast Switching Characteristic

I_D

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-35

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current (Chip)

-85

Drain Current, V_GS@ 10V³

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

-75

-55

-300

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation⁴

Storage Temperature Range

Operating Junction Temperature Range

92.6

℃

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

1.35

62.5

Rthj-a

Data and specifications subject to change without notice

201412312AP

12 3 4 5

中文翻译

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