生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 169 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AP40N03GJ-HF | A-POWER | Fast Switching Characteristic RoHS Compliant & Halogen-Free |
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AP40N03GP | A-POWER | Low Gate Charge Simple Drive Requirement |
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AP40N03GP-HF | A-POWER | TRANSISTOR POWER, FET, FET General Purpose Power |
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AP40N03GS | A-POWER | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP40N03S | A-POWER | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP40N-050KG-4-STICK | FUJIKURA | Peizoresistive Sensor, 0Psi Min, 7Psi Max, 1.5%, Rectangular, Through Hole Mount, |
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