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AP40G120AW PDF预览

AP40G120AW

更新时间: 2024-11-18 21:22:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 局域网双极性晶体管
页数 文件大小 规格书
3页 93K
描述
TRANSISTOR 80 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3P, 3 PIN, Insulated Gate BIP Transistor

AP40G120AW 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:2
Reach Compliance Code:compliant风险等级:5.66
外壳连接:COLLECTOR最大集电极电流 (IC):80 A
集电极-发射极最大电压:1200 V配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称断开时间 (toff):460 ns
标称接通时间 (ton):65 nsBase Number Matches:1

AP40G120AW 数据手册

 浏览型号AP40G120AW的Datasheet PDF文件第2页浏览型号AP40G120AW的Datasheet PDF文件第3页 
AP40G120AW  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL INSULATED GATE  
BIPOLAR TRANSISTOR  
Features  
C
VCES  
IC  
1200V  
40A  
Advanced IGBT Technology  
Low Saturation Voltage  
V
CE(sat)=3V@IC=40A  
C
E
G
Industry Standard TO-3P Package  
G
TO-3P  
C
E
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VCES  
Collector-Emitter Voltage  
1200  
+20  
VGE  
Gate-Emitter Voltage  
V
IC@TC=25  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current1  
Maximum Power Dissipation  
Storage Temperature Range  
80  
A
IC@TC=100℃  
40  
A
ICM  
160  
A
PD@TC=25℃  
417  
W
TSTG  
TJ  
-55 to 150  
-55 to 150  
300  
Operating Junction Temperature Range  
Maximum Lead Temp. for Soldering Purposes  
, 1/8" from case for 10 seconds .  
TL  
Notes:  
1.Pulse width limited by max. junction temperature .  
Thermal Data  
Symbol  
Rthj-c  
Rthj-a  
Parameter  
Value  
0.3  
Units  
/W  
/W  
Thermal Resistance Junction-Case  
Thermal Resistance Junction-Ambient  
40  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVCES  
Parameter  
Test Conditions  
GE=0V, IC=250uA  
Min. Typ. Max. Units  
V
Collect-to-Emitter Breakdown Voltage  
Gate-to-Emitter Leakage Current  
Collector-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
1200  
-
-
-
V
nA  
uA  
V
VGE=+20V, VCE=0V  
VCE=1200V, VGE=0V  
VGE=15V, IC=40A  
VGE=15V, IC=50A  
IGES  
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
+100  
ICES  
-
500  
VCE(sat)  
3
3.4  
-
3.7  
7
-
V
V
CE=VGE, IC=250uA  
IC=40A  
CC=500V  
VGE(th)  
Qg  
Gate Threshold Voltage  
Total Gate Charge  
Gate-Emitter Charge  
Gate-Collector Charge  
Turn-on Delay Time  
Rise Time  
-
V
nC  
nC  
nC  
ns  
ns  
ns  
ns  
mJ  
mJ  
pF  
pF  
pF  
155  
27  
90  
35  
30  
150  
310  
2.1  
3.1  
3010  
215  
22  
V
Qge  
Qgc  
td(on)  
tr  
-
VGE=15V  
VCC=600V,  
Ic=40A,  
-
-
-
VGE=15V,  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
-
RG=5,  
-
Inductive Load  
Eon  
Eoff  
Cies  
Coes  
Cres  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Input Capacitance  
-
-
VGE=0V  
-
VCE=30V  
f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
-
-
Data and specifications subject to change without notice  
1
201103291  

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