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AP4034AGM-HF PDF预览

AP4034AGM-HF

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极驱动
页数 文件大小 规格书
4页 101K
描述
Lower Gate Charge, Simple Drive Requirement

AP4034AGM-HF 数据手册

 浏览型号AP4034AGM-HF的Datasheet PDF文件第2页浏览型号AP4034AGM-HF的Datasheet PDF文件第3页浏览型号AP4034AGM-HF的Datasheet PDF文件第4页 
AP4034AGM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
13A  
D
D
D
Simple Drive Requirement  
D
Fast Switching Characteristic  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance  
and cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial-industrial surface  
mount applications and suited for low voltage applications such as DC/DC  
converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+12  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
13  
A
10.4  
A
50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201110241  

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