Datasheet > AP3C011M

AP3C011M

更新时间： 2024-11-20 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
10页	272K
描述
SO-8

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AP3C011M 数据手册

AP3C011M

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

30V

10mΩ

10.8A

-30V

▼ Low Gate Charge

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

SO-8

R_DS(ON)

22mΩ

-7.8A

Description

I_D

AP3C011 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for voltage conversion or switch

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

+20

10.8

8.6

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-7.8

-6.2

Pulsed Drain Current¹

-30

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202002071

12 3 4 5 6 7...10

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