Datasheet > AP3C011H

AP3C011H

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	260K
描述
TO-252-4L

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中文翻译

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AP3C011H 数据手册

AP3C011H

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

30V

10mΩ

12A

D1/D2

▼ Good Thermal Performance

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-30V

22mΩ

-12A

Description

I_D

TO-252-4L

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-12

9.4

-9.4

Pulsed Drain Current¹

-40

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation⁴

20.8

3.13

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

202002071

12 3 4 5 6 7 8

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