5秒后页面跳转
AP3A020M PDF预览

AP3A020M

更新时间: 2024-11-26 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 64K
描述
SO-8

AP3A020M 数据手册

 浏览型号AP3A020M的Datasheet PDF文件第2页浏览型号AP3A020M的Datasheet PDF文件第3页浏览型号AP3A020M的Datasheet PDF文件第4页浏览型号AP3A020M的Datasheet PDF文件第5页 
AP3A020M  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D2  
D2  
Simple Drive Requirement  
BVDSS  
30V  
20mΩ  
7.8A  
D1  
Low Gate Charge  
RDS(ON)  
D1  
3
Fast Switching Performance  
ID  
G2  
S2  
G1  
RoHS Compliant & Halogen-Free  
S1  
SO-8  
Description  
AP3A020 series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible  
on-resistance and fast switching performance. It provides the  
designer with an extreme efficient device for use in a wide  
range of power applications.  
D2  
S2  
D1  
S1  
G2  
G1  
The SO-8 package is widely preferred for all commercial-  
industrial surface mount applications using infrared reflow  
technique and suited for voltage conversion or switch  
applications.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
Gate-Source Voltage  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
7.8  
A
6.2  
A
20  
A
PD@TA=25℃  
EAS  
Total Power Dissipation  
2
W
mJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
7.2  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
1
201705081