AP3A020M
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
▼ Simple Drive Requirement
BVDSS
30V
20mΩ
7.8A
D1
▼ Low Gate Charge
RDS(ON)
D1
3
▼ Fast Switching Performance
ID
G2
S2
G1
▼ RoHS Compliant & Halogen-Free
S1
SO-8
Description
AP3A020 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D2
S2
D1
S1
G2
G1
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
30
+20
Gate-Source Voltage
V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
7.8
A
6.2
A
20
A
PD@TA=25℃
EAS
Total Power Dissipation
2
W
mJ
℃
℃
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
7.2
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
1
201705081