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AP3A010MT PDF预览

AP3A010MT

更新时间: 2024-11-26 17:15:27
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 71K
描述
PMPAK-5x6

AP3A010MT 数据手册

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AP3A010MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1 D1 D2 D2  
Simple Drive Requirement  
BVDSS  
30V  
Fast Switching Characteristic  
RDS(ON)  
10.5mΩ  
RoHS Compliant & Halogen-Free  
D1  
D1  
D2  
D2  
Description  
S1 G1 S2 G2  
AP3A010 series are from Advanced Power innovated  
design and silicon process technology to achieve the  
lowest possible on-resistance and fast switching  
performance. It provides the designer with an extreme  
S1  
G1  
S2  
efficient device fo  
®
PMPAK  
5x6 dual pad provide superior thermal  
G2  
PMPAK
®
5x6  
performance and is design for surface mount  
applications.  
Absolute Maximum Ratings  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
Gate-Source Voltage  
V
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V4  
Drain Current, VGS @ 10V3,4  
Drain Current, VGS @ 10V3,4  
Pulsed Drain Current1  
34  
A
14.6  
A
11.7  
A
80  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
3.57  
W
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Units  
/W  
/W  
Rating  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
6
Rthj-a  
35  
1
201709131