AP3A010MT
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 D1 D2 D2
▼ Simple Drive Requirement
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
10.5mΩ
▼ RoHS Compliant & Halogen-Free
D1
D1
D2
D2
Description
S1 G1 S2 G2
AP3A010 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
performance. It provides the designer with an extreme
S1
G1
S2
efficient device fo
®
PMPAK
5x6 dual pad provide superior thermal
G2
performance and is design for surface mount
applications.
Absolute Maximum Ratings
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
30
+20
Gate-Source Voltage
V
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
34
A
14.6
A
11.7
A
80
A
PD@TA=25℃
TSTG
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3.57
W
℃
℃
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Units
℃/W
℃/W
Rating
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
6
Rthj-a
35
1
201709131