Datasheet > AP3838CDT33

AP3838CDT33

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		光电二极管
页数	文件大小	规格书
10页	154K
描述
PDFN3.3x3.3B-DLR

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AP3838CDT33 数据手册

AP3838CDT33

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

CH-1 BV_DSS

R_DS(ON)

30V

▼ Buck-boost in Computing

4.2mΩ

▼ RoHS Compliant & Halogen-Free

CH-2 BV_DSS

R_DS(ON)

30V

5.2mΩ

S1(Sense)

D2/S1

Description

Advanced Power MOSFETs from APEC provide

the designer with the best combination of fast

switching, ruggedized device design, low on-

resistance and cost-effectiveness.

Top View

Bottom View

S1(Sense)

D2/S1

S1(Sense)

The PDFN3.3x3.3B-DLR package is special for

buck-boost conveters in computing application

using bottom source technique with the backside

heat sink to achieve the good thermal

performance.

D2/S1

PDFN3.3x3.3B-DLR

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

CH-1

CH-2

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+12

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current (Package Limited)

Drain Current

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

23.5

18.8

110

32.8

3.47

19.5

15.6

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁶

Avalanche Current

29.7

3.12

12.5

I_AS

T_STG

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

T_J

Thermal Data

Rating

Symbol

Parameter

Units

CH-1

3.8

CH-2

4.2

Rthj-c

Rthj-a

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Maximum Thermal Resistance, Junction-ambient⁴

℃/W

202305261

12 3 4 5 6 7...10

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