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AP3702YT PDF预览

AP3702YT

更新时间: 2024-10-31 17:15:51
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
10页 273K
描述
PMPAK-3x3

AP3702YT 数据手册

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AP3702YT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1  
Simple Drive Requirement  
N-CH BVDSS  
RDS(ON)  
30V  
35mΩ  
-30V  
D2  
Good Thermal Performance  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
P-CH BVDSS  
RDS(ON)  
S1  
G1  
S2  
G2  
PMPAK® 3x3  
48mΩ  
Description  
AP3702 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
D1  
D2  
S2  
G1  
G2  
S1  
®
The PMPAK  
3x3 package is special for voltage conversion  
application using standard infrared reflow technique with the  
backside heat sink to achieve the good thermal performance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
14.7  
9.3  
6.6  
5.3  
24  
V
V
Gate-Source Voltage  
+20  
ID@TC=25℃  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
-13.4  
-8.5  
A
A
-6  
A
-4.8  
A
-20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
10  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
50  
1
202105141  

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