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AP3700MT PDF预览

AP3700MT

更新时间: 2024-11-20 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
8页 141K
描述
PMPAK-5x6

AP3700MT 数据手册

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AP3700MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1 D1 D2 D2  
Simple Drive Requirement  
N-CH BVDSS  
RDS(ON)  
30V  
18mΩ  
11A  
Good Thermal Performance  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
3
ID  
P-CH BVDSS  
RDS(ON)  
-30V  
45mΩ  
-7.3A  
S1 G1 S2 G2  
3
Description  
ID  
AP3700 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
D1  
D1  
D2  
D2  
®
The PMPAK 5x6 package is special for voltage conversion  
application using standard infrared reflow technique with the  
backside heat sink to achieve the good thermal performance.  
S1  
G1  
S2  
G2  
PMPAK® 5x6  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
11  
V
V
Gate-Source Voltage  
+20  
-7.3  
-5.9  
-30  
ID@TA=25  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
A
8.7  
40  
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.57  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Units  
Rating  
N-channel  
P-channel  
Rthj-c  
Rthj-a  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
7.2  
35  
7.2  
35  
/W  
/W  
Data and specifications subject to change without notice  
1
201608081  

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