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AP2R803GM-HF PDF预览

AP2R803GM-HF

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
4页 118K
描述
Lower On-resistance, Simple Drive Requirement

AP2R803GM-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.66配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.0032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2R803GM-HF 数据手册

 浏览型号AP2R803GM-HF的Datasheet PDF文件第2页浏览型号AP2R803GM-HF的Datasheet PDF文件第3页浏览型号AP2R803GM-HF的Datasheet PDF文件第4页 
AP2R803GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
30V  
D
D
D
Simple Drive Requirement  
3.2mΩ  
22.8A  
D
Fast Switching Characteristic  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
D
S
Description  
AP2R803 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
G
The SO-8 package is widely preferred for all commercial-industrial surface  
mount applications using infrared reflow technique and suited for voltage  
conversion or switch applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+12  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
22.8  
A
18.3  
A
80  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201212111  

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