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AP2R803AGMT-HF PDF预览

AP2R803AGMT-HF

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
4页 101K
描述
Simple Drive Requirement, SO-8 Compatible with Heatsink

AP2R803AGMT-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-N8
针数:8Reach Compliance Code:compliant
HTS代码:8541.29.00.95风险等级:5.66
雪崩能效等级(Eas):45 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.0042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2R803AGMT-HF 数据手册

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AP2R803AGMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
3mΩ  
105A  
D
S
SO-8 Compatible with Heatsink  
Low On-resistance  
G
RoHS Compliant & Halogen-Free  
D
D
Description  
Advanced Power MOSFETs from APEC provide the  
D
D
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The PMPAK® 5x6 package is special for DC-DC converters application  
and the foot print is compatible with SO-8 with backside heat sink and  
lower profile.  
S
S
S
G
PMPAK® 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+12  
Continuous Drain Current (Chip), VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
105  
A
33  
A
26.5  
240  
A
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
50  
W
W
mJ  
Total Power Dissipation  
5
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
45  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
2.5  
25  
Rthj-a  
Data & specifications subject to change without notice  
1
201103021  

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