生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-N8 |
针数: | 8 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.66 |
雪崩能效等级(Eas): | 45 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 0.0042 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-N8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 240 A |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP2R803GH | A-POWER |
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TRANSISTOR 75 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PA | |
AP2R803GH-HF | A-POWER |
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Low On-resistance, Simple Drive Requirement | |
AP2R803GM-HF | A-POWER |
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Lower On-resistance, Simple Drive Requirement | |
AP2R803GMT-HF | A-POWER |
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Simple Drive Requirement, SO-8 Compatible | |
AP2R803GS-HF | A-POWER |
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TRANSISTOR POWER, FET, FET General Purpose Power | |
AP2RA04GMT-HF | A-POWER |
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2S | ABRACON |
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SURFACE-MOUNT CMOS PROGRAMMABLE OSCILLATOR | |
AP2S_08 | ABRACON |
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SURFACE-MOUNT CMOS PROGRAMMABLE OSCILLATOR | |
AP2S-1.000MHZ-EC-T | ABRACON |
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CMOS Output Clock Oscillator, 1MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, SMD, 4 PIN | |
AP2S-1.000MHZ-E-T | ABRACON |
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CMOS Output Clock Oscillator, 1MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, SMD, 4 PIN |