Datasheet > AP2P150H

AP2P150H

更新时间： 2024-09-14 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	73K
描述
TO-252

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AP2P150H 数据手册

AP2P150H

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% UIS Test

BV_DSS

R_DS(ON)

I_D

-20V

150mΩ

-8.3A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP2P150 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow technique

and suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

-20

Units

V_DS

V_GS

Gate-Source Voltage

+12

I_D@T_C=25^oC

I_D@T_C=100^oC

I_DM

-8.3

Drain Current, V_GS@ 4.5V

Pulsed Drain Current¹

-5.3

-24

P_D@T_C=25^oC

P_D@T_A=25^oC

E_AS

Total Power Dissipation

Total Power Dissipation⁴

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

15.6

^oC

1.25

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

^oC/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

Rthj-a

62.5

201806201

12 3 4 5 6

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