Datasheet > AP2P052Y

AP2P052Y

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	74K
描述
SOT-26

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AP2P052Y 数据手册

AP2P052Y

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Capable of 1.8V Gate Drive

BV_DSS

R_DS(ON)

I_D

-20V

52mΩ

-5.1A

▼ Small Package Outline

▼ Surface Mount Device

▼ RoHS Compliant & Halogen-Free

SOT-26

Description

AP2P052 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The special design SOT-26 package with good thermal performance is

widely preferred for all commercial-industrial surface mount applications

using infrared reflow technique and suited for voltage conversion or

switch applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-20

Gate-Source Voltage

Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-5.1

-4.1

-20

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-amb

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201608091

12 3 4 5 6

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