Datasheet > AP2P028EN2

AP2P028EN2

更新时间： 2024-09-16 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	75K
描述
DFN-2x2

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中文翻译

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数据手册

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AP2P028EN2 数据手册

AP2P028EN2

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Capable of 1.8V Gate Drive

BV_DSS

-20V

▼ ESD Diode Protected

R_DS(ON)

28mΩ

▼ Suit for USB Type-C Application

▼ RoHS Compliant & Halogen-Free

I_D

-7.5A

8KV

HBM ESD

Description

Top view

AP2P028 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

DFN 2x2

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-20

Gate-Source Voltage

Drain Current³@ V_GS=4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-7.5

-6

-20

P_D@T_A=25℃

T_STG

Total Power Dissipation³

2.4

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201702132

12 3 4 5 6

中文翻译

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