AP2P028EN
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
BVDSS
-20V
D
▼ ESD Diode Protected
RDS(ON)
28mΩ
▼ Suit for USB Type-C Application
▼ RoHS Compliant & Halogen-Free
ID
-4.5A
8KV
S
HBM ESD
SOT-23
G
Description
D
AP2P028E series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
S
The SOT-23 package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-20
Gate-Source Voltage
+8
V
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
-4.5
A
-3.6
A
-20
A
PD@TA=25℃
TSTG
Total Power Dissipation3
0.86
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
145
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
1
202008272