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AP2765I-A-HF PDF预览

AP2765I-A-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 63K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2765I-A-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.75
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP2765I-A-HF 数据手册

 浏览型号AP2765I-A-HF的Datasheet PDF文件第2页浏览型号AP2765I-A-HF的Datasheet PDF文件第3页浏览型号AP2765I-A-HF的Datasheet PDF文件第4页 
AP2765I-A-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
650V  
0.85Ω  
8A  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
G
RoHS Compliant & Halogen-Free  
Description  
AP2765 series are specially designed as main switching devices for  
universal 90~265VAC off-line AC/DC converter applications.  
G
D
S
TO-220CFM(I)  
TO-220CFM type provide high blocking voltage to overcome voltage  
surge and sag in the toughest power system with the best combination  
of fast switching,ruggedized design and cost-effectiveness.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
650  
+30  
8
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
4.7  
A
20  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
36.7  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.4  
65  
Rthj-a  
Data & specifications subject to change without notice  
1
201003031  

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