Datasheet > AP2530AGY

AP2530AGY

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	122K
描述
SOT-26

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中文翻译

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数据手册

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AP2530AGY 数据手册

AP2530AGY-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Low Gate Charge

N-CH BV_DSS

30V

72mΩ

3.3A

▼ Fast Switching Performance

▼ Surface Mount Package

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

▼ RoHS Compliant & Halogen-Free

-30V

SOT-26

150mΩ

-2.3A

Description

I_D

Advanced Power MOSFETs utilized advanced processing

techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-26 package is widely used for commercial surface mount

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-30

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

3.3

2.7

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-2.3

-1.8

-10

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.136

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

110

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201501212

12 3 4 5 6 7 8

中文翻译

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