AP2320GN

更新时间： 2024-10-01 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	54K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2320GN 数据手册

AP2320GN

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

5Ω

▼ Small Package Outline

▼ Surface Mount Device

▼ RoHS Compliant

0.25A

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing

techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SOT-23 package is widely used for commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

100

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

0.25

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

0.2

P_D@T_A=25℃

Total Power Dissipation

0.7

Linear Derating Factor

0.005

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

180

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201211145

12 3 4

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