AP2316GN

更新时间： 2024-01-27 01:54:44

品牌	Logo	应用领域
富鼎先进 - A-POWER		晶体晶体管功率场效应晶体管脉冲光电二极管驱动
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4页	64K
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中文翻译

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数据手册

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AP2316GN 数据手册

AP2316GN-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

42mΩ

4.7A

▼ Small Package Outline

▼ Surface Mount Device

▼ RoHS Compliant & Halogen-Free

SOT-23

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-23 package is widely used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.7

3.7

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201008182

12 3 4

中文翻译

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