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AP2313GN-HF-3TR PDF预览

AP2313GN-HF-3TR

更新时间: 2024-09-29 01:21:23
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 259K
描述
P-channel Enhancement-mode Power MOSFET

AP2313GN-HF-3TR 数据手册

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Advanced Power  
Electronics Corp.  
AP2313GN-HF-3  
P-channel Enhancement-mode Power MOSFET  
Simple Drive Requirement  
D
BVDSS  
RDS(ON)  
ID  
-20V  
160m  
-2.5A  
Small Package Outline  
Surface Mount Device  
G
RoHS-compliant, Halogen-free  
S
Description  
D
Advanced Power MOSFETs from APEC provide the designer with the best  
combination of fast switching, low on-resistance and cost-effectiveness.  
S
The AP2313GN-HF-3 is in the popular SOT-23 small surface-mount package  
which is widely used in commercial and industrial applications where a small  
board footprint is required.  
SOT-23  
G
This device is well suited for use in medium current applications such as  
load switches.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
-20  
+12  
Gate-Source Voltage  
V
ID at T =25°C  
Continuous Drain Current 3  
Continuous Drain Current3  
Pulsed Drain Current1  
-2.5  
A
A
ID at TA= 70°C  
-1.97  
A
IDM  
10  
A
PD at TA=25°C  
Total Power Dissipation  
0.83  
W
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
150  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
°C/W  
Ordering Information  
AP2313GN-HF-3TR  
RoHS-compliant, halogen-free SOT-23, shipped on tape and reel, 3000pcs/reel  
©2009 Advanced Power Electronics Corp. USA  
www.a-powerusa.com  
200710223-3  
1/5  

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