Datasheet > AP20N15GH

AP20N15GH

更新时间： 2024-11-07 17:15:47

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	102K
描述
TO-252

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中文翻译

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技术参数
数据手册

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AP20N15GH 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AP20N15GH 数据手册

AP20N15GH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

150V

100mΩ

20A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP20N15 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

150

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_C=25℃

T_STG

Total Power Dissipation

89.2

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

1.4

Rthj-a

62.5

Data and specifications subject to change without notice

201409173

12 3 4 5

中文翻译

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