生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.67 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 20.5 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP20N15GH | A-POWER |
获取价格 |
TO-252 | |
AP20N15GH-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP20N15GI | A-POWER |
获取价格 |
TRANSISTOR 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, T | |
AP20N15GI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP20N-200KG | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 30Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Hol | |
AP20N-200KG-STICK | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 30Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Hol | |
AP20N24-ZERO | GLENAIR |
获取价格 |
AP 系列24W是 HIECUBE 为客户提供的小型封装形式的高性能模块电源,该系列电源具 | |
AP20N-500KG-STICK | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 70Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Hol | |
AP20N-700KG | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 100Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Ho | |
AP20N-700KG-STICK | FUJIKURA |
获取价格 |
Peizoresistive Sensor, 0Psi Min, 100Psi Max, 1.5%, 4.6325-4.7675V, Rectangular, Through Ho |