AP20AN160H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
200V
160mΩ
18A
▼ Simple Drive Requirement
RDS(ON)
4
▼ Lower Gate Charge
ID
G
▼ RoHS Compliant & Halogen-Free
Description
G
D
S
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TO-252(H)
The TO-220 package is widely preferred for all commercial-
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connection resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
200
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V4
Pulsed Drain Current1
ID@TC=25℃
18
A
IDM
72
A
PD@TC=25℃
Total Power Dissipation
Total Power Dissipation5
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
83.3
W
W
mJ
℃
℃
PD@TA=25℃
2
EAS
TSTG
TJ
50
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
1.5
Rthj-a
62.5
1
201904091