Datasheet > AP1A003GMT-HF

AP1A003GMT-HF

更新时间： 2024-10-04 12:34:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	55K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP1A003GMT-HF 数据手册

AP1A003GMT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

0.99mΩ

260A

▼ SO-8 Compatible with Heatsink

▼ Low On-resistance

▼ RoHS Compliant & Halogen-Free

Description

AP1A003 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

5x6 package is special for DC-DC converters

PMPAK^®5x6

application and the foot print is compatible with SO-8 with backside

heat sink and lower profile.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

260

Drain Current (Chip), V_GS@ 10V⁴

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

300

104

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

1.2

Rthj-a

Data and specifications subject to change without notice

201311181

12 3 4

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