Datasheet > AP18T10AGHJ-HF_14

AP18T10AGHJ-HF_14

更新时间： 2024-10-05 01:18:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	102K
描述
Simple Drive Requirement

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AP18T10AGHJ-HF_14 数据手册

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AP18T10AGH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

160mΩ

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ Halogen Free & RoHS Compliant Product

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

TO-252(H)

TO-251(J)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP18T10AGJ)

are available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

5.6

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation³

27.8

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

4.5

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

110

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

201102233

12 3 4

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