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AP18P10AGHJ-HF

更新时间： 2024-10-04 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	71K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP18P10AGHJ-HF 数据手册

AP18P10AGH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-100V

140mΩ

-12A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters. The through-hole version (AP18P10AGJ) is

available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-100

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+30

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-12

-7.4

-48

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation³

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

3.2

Rthj-a

62.5

110

Rthj-a

Data and specifications subject to change without notice

201203132

12 3 4

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