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AP16N50I-HF PDF预览

AP16N50I-HF

更新时间: 2024-11-11 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 63K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP16N50I-HF 数据手册

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AP16N50I-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
500V  
0.4Ω  
16A  
Simple Drive Requirement  
Fast Switching Characteristic  
G
RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
500  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
16  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
11  
A
60  
A
PD@TC=25℃  
Total Power Dissipation  
52  
W
Linear Derating Factor  
0.42  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
2.4  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200912163  

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