AP16N50I-HF

更新时间： 2024-10-03 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	63K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP16N50I-HF 数据手册

AP16N50I-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

500V

0.4Ω

16A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

TO-220CFM(I)

The TO-220CFM isolation package is widely preferred for

commercial-industrial through hole applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

500

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.42

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

2.4

Rthj-a

Data and specifications subject to change without notice

200912163

12 3 4

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