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AP15NA9R3CXT PDF预览

AP15NA9R3CXT

更新时间: 2024-05-23 22:22:40
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 72K
描述
PMPAK-5x6X

AP15NA9R3CXT 数据手册

 浏览型号AP15NA9R3CXT的Datasheet PDF文件第2页浏览型号AP15NA9R3CXT的Datasheet PDF文件第3页浏览型号AP15NA9R3CXT的Datasheet PDF文件第4页浏览型号AP15NA9R3CXT的Datasheet PDF文件第5页浏览型号AP15NA9R3CXT的Datasheet PDF文件第6页 
AP15NA9R3CXT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
150V  
D
S
Simple Drive Requirement  
Low On-resistance  
RDS(ON)  
9.3mΩ  
G
RoHS Compliant & Halogen-Free  
D
D
D
Description  
D
AP15NA9R3C series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
S
S
The PMPAK ® 5x6X package is special for DC-DC converters  
application and the foot print is compatible with SO-8 with backside  
heat sink and lower profile.  
S
G
PMPAK® 5x6X  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
150  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
96  
A
Drain Current, VGS @ 10V  
68  
A
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
16.1  
A
13.4  
A
300  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
214.2  
6
W
W
mJ  
288  
TSTG  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
0.7  
25  
Rthj-a  
1
202209231  

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