Datasheet > AP15NA7R4CDT

AP15NA7R4CDT

更新时间： 2024-11-21 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		光电二极管
页数	文件大小	规格书
6页	113K
描述
PDFN5x6-FL

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中文翻译

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数据手册

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AP15NA7R4CDT 数据手册

AP15NA7R4CDT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

150V

▼ Simple Drive Requirement

▼ Low On-resistance

R_DS(ON)

7.4mΩ

▼ RoHS Compliant & Halogen-Free

Description

PDFN5x6-FL

AP15NA7R4C series are from Advanced Power innovated

design and silicon process technology to achieve the lowest

possible on-resistance and fast switching performance. It

provides the designer with an extreme efficient device for use

in a wide range of power applications.

The PDFN5x6-FL package used advanced package and

silicon combination for ultra low on-resistance and high

efficiency, special for DC-DC converters application and the

foot print is compatible with SO-8 with backside heat sink and

lower profile.

Bottom View

Top View

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

150

Units

V_DS

V_GS

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴(Package Limited)

Drain Current, V_GS@ 10V

Drain Current, V_GS@ 10V³

120

100

18.6

15.6

Pulsed Drain Current¹

400

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁶

Storage Temperature Range

Operating Junction Temperature Range

250

℃

312.5

-55 to 175

T_STG

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

0.6

Rthj-a

202311201

12 3 4 5 6

中文翻译

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