AP15NA052H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ 100% Rg & UIS Test
BVDSS
150V
▼ Simple Drive Requirement
RDS(ON)
52mΩ
▼ Lower On-resistance
G
▼ RoHS Compliant & Halogen-Free
Description
G
D
S
AP41650N4A0s5e2riesseraieres farroemfrAomdvaAndcveadncPeodweProwinenrovinanteodvadteedsigdnesign
and silicon process technology to aacchhiieevvee tthhee lloowweesstt ppoossssiibbllee on-
orens-irsetsainsctaenacnedafnadstfaswstitcshwiintcghpinegrfopremrfaonrmcea.nIctep.roItvipdreosvitdheesdtehseigner
dweitshigannerexwtritehmaeneeffxictireenmtedeevfficiceiefnotr duesveicien aforwiudseerainngae wofidpeower
raapnpgliecaotfiopnosw. er applications.
TO-252(H)
The TO-220 package is widely preferred for all commercial-
iTnhdeustTriOal-25t2hropuagchkagheoleis awpidpelilcyatipornesfe. rreTdheforloawll cthoemrmmaelrcial-
rinedsuisstatrniacle asunrdfalcoew pmacokuangte acpopslticcaotinotnrisbuteustiongtheinwfroarleddwidreeflow
pteocphunlaiqrupeacaknadges.uited for high current application due to the low
connection resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
150
Gate-Source Voltage
+20
V
Drain Current , VGS @ 10V
Drain Current , VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
21.8
A
13.8
A
60
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
56.8
W
W
mJ
℃
℃
2
32
TSTG
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
2.2
Rthj-a
62.5
1
202206301