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AP15NA052H

更新时间: 2024-11-19 17:15:43
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 74K
描述
TO-252

AP15NA052H 数据手册

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AP15NA052H  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Rg & UIS Test  
BVDSS  
150V  
Simple Drive Requirement  
RDS(ON)  
52mΩ  
Lower On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
G
D
S
AP15NA052series arefromAdvancedPowerinnovateddesign  
and silicon process technology to achieve the lowest possible on-  
resistanceandfastswitchingperformance.Itprovidesthedesigner  
withanextremeefficientdevicefor usein awiderange ofpower  
applications.
TO-252(H)  
TheTO-252packageis widelypreferredforall commercial-  
industrialsurfacemountapplicationsusinginfraredreflow  
techniqueandsuited for high current application due to the low  
connection resistance.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
150  
Gate-Source Voltage  
+20  
V
Drain Current , VGS @ 10V  
Drain Current , VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
21.8  
A
13.8  
A
60  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
Total Power Dissipation3  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
56.8  
W
W
mJ  
2
32  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
2.2  
Rthj-a  
62.5  
1
202206301  

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Simple Drive Requirement