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AP1504M PDF预览

AP1504M

更新时间: 2024-11-02 17:15:51
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 109K
描述
SO-8

AP1504M 数据手册

 浏览型号AP1504M的Datasheet PDF文件第2页浏览型号AP1504M的Datasheet PDF文件第3页浏览型号AP1504M的Datasheet PDF文件第4页浏览型号AP1504M的Datasheet PDF文件第5页浏览型号AP1504M的Datasheet PDF文件第6页 
AP1504M  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
150V  
59mΩ  
4.5A  
D
D
D
D
Low Gate Charge  
RDS(ON)  
3
Fast Switching Characteristic  
ID  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
D
S
Description  
AP1504 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and  
fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
G
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and suited  
for voltage conversion or switch applications.  
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
150  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
4.5  
A
3.6  
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
1
202212271  

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