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AP12NB7R6P PDF预览

AP12NB7R6P

更新时间: 2024-09-14 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 110K
描述
TO-220

AP12NB7R6P 数据手册

 浏览型号AP12NB7R6P的Datasheet PDF文件第2页浏览型号AP12NB7R6P的Datasheet PDF文件第3页浏览型号AP12NB7R6P的Datasheet PDF文件第4页浏览型号AP12NB7R6P的Datasheet PDF文件第5页浏览型号AP12NB7R6P的Datasheet PDF文件第6页 
AP12NB7R6P  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% UIS Test  
BVDSS  
RDS(ON)  
ID  
120V  
7.6mΩ  
88A  
D
S
Simple Drive Requirement  
Lower On-resistance  
G
RoHS Compliant & Halogen-Free  
Description  
AP12NB7R6series are fromAdvancedPower innovated
designandsiliconprocesstechnologytoachievethelowest  
possibleon-resistanceandfastswitchingperformance.It  
providesthedesignerwith anextremeefficient device foruse  
inawiderangeof powerapplications.  
G
TO-220(P)  
D
S
TheTO-220packageiswidelypreferred forallcommercial-
industrialthrough holeapplications.Thelowthermal  
resistanceandlow package cost contribute to the worldwide  
popular package.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
120  
Gate-Source Voltage  
+20  
V
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
88  
A
55.7  
A
320  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
113.6  
2
W
W
mJ  
Total Power Dissipation  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
200  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.1  
62  
Rthj-a  
1
202304111  

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