Datasheet > AP1203GMT

AP1203GMT

更新时间： 2024-02-17 14:30:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	155K
描述
AP1203GMT

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技术参数
数据手册

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AP1203GMT 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AP1203GMT 数据手册

AP1203GMT

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

12mΩ

45A

▼ SO-8 Compatible

▼ Fast Switching Performance

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

□

The PMPAK 5x6 package is special for DC-DC converters application

and the foot print is compatible with SO-8 with backside heat sink.

PMPAK 5x6

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current

Continuous Drain Current³

Pulsed Drain Current¹

180

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

36.7

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

57.6

-55 to 150

T_STG

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

3.4

Rthj-a

Data & specifications subject to change without notice

200808116

12 3 4 5

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