AP10NB2R0TL
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
100V
D
S
▼ Simple Drive Requirement
RDS(ON)
2mΩ
▼ Ultra Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
D
Description
AP10NB2R0 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
S
TOLL (TL)
S
S
S
S
S
S
The TOLL package is a perfect solution for high power density and
high power efficiency application.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
247
A
175
A
1000
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
250
W
W
mJ
℃
℃
3.75
500
TSTG
-55 to 175
-55 to 175
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
0.6
40
Rthj-a
1
202303241