Datasheet > AP10NA8R4R

AP10NA8R4R

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	250K
描述
TO-262

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AP10NA8R4R 数据手册

AP10NA8R4R

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

R_DS(ON)

I_D

100V

8.4mΩ

66A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP10NA8R4 series are from Advanced Power innovated

design and silicon process technology to achieve the lowest

possible on-resistance and fast switching performance. It

provides the designer with an extreme efficient device for use

in a wide range of power applications.

TO-262(R)

The TO-262 package is widely preferred for commercial-

industrial through-hole applications and suited for low voltage

applications such as DC/DC converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

240

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

℃

Total Power Dissipation

Single Pulse Avalanche Energy³

Storage Temperature Range

Operating Junction Temperature Range

125

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

1.8

Rthj-a

202208221

12 3 4 5 6

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