Datasheet > AP10NA1R5TL-AT

AP10NA1R5TL-AT

更新时间： 2025-07-20 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	115K
描述
TOLL

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AP10NA1R5TL-AT 数据手册

AP10NA1R5TL-AT

Automotive Grade Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

100V

▼ Simple Drive Requirement

R_DS(ON)

1.5mΩ

▼ Ultra Low On-resistance

▼ RoHS Compliant & Halogen-Free

▼ AEC Qualified

TOLL (TL)

Description

AP10NA1R5 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The TOLL package is a perfect solution for high power density and

high power efficiency application.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V⁴(Silicon Limited)

Drain Current, V_GS@ 10V⁴

Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

347

300

245

Pulsed Drain Current¹

1200

333

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

Operating Junction Temperature Range

℃

3.75

500

T_STG

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

0.45

Rthj-a

202307211AT

12 3 4 5 6

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