Datasheet > AP10NA014YT

AP10NA014YT

更新时间： 2024-11-05 17:15:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	111K
描述
PMPAK-3x3

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中文翻译

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AP10NA014YT 数据手册

AP10NA014YT

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

100V

▼ Small Size & Lower Profile

R_DS(ON)

14mΩ

▼ RoHS Compliant & Halogen-Free

Description

AP10NA014 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-resistance

and fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The PMPAK^®3x3 package is special for voltage conversion application

using standard infrared reflow technique with the backside heat sink to

achieve the good thermal performance.

PMPAK^®3 x 3

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

100

Units

V_DS

V_GS

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current, V_GS@ 10V

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

39.7

10.8

8.7

120

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁵

Storage Temperature Range

41.6

℃

3.12

T_STG

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

202204131

12 3 4 5 6

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