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AP10C150H

更新时间: 2024-09-14 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
8页 96K
描述
TO-252-4L

AP10C150H 数据手册

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AP10C150H  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
100V  
150mΩ  
8A  
D1/D2  
Good Thermal Performance  
Fast Switching Performance  
RoHS Compliant & Halogen-Free  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
-100V  
160mΩ  
-8A  
G1  
S2  
G2  
Description  
ID  
TO-252-4L  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-100  
+20  
-8  
VDS  
VGS  
Drain-Source Voltage  
100  
+20  
8
V
V
Gate-Source Voltage  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
A
5
-5  
A
3.2  
2.5  
20  
-3.2  
-2.5  
-20  
A
A
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
20.8  
3.13  
W
W
Total Power Dissipation3  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
6
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
40  
1
201707201  

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