Datasheet > AP10C135M

AP10C135M

更新时间： 2024-09-21 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
10页	144K
描述
SO-8

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中文翻译

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AP10C135M 数据手册

AP10C135M

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

100V

135mΩ

3.2A

▼ Low Gate Charge

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-100V

155mΩ

-3.2A

SO-8

Description

I_D

AP10C135 series are from Advanced Power innovated design

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for voltage conversion or switch

applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-100

V_DS

V_GS

Drain-Source Voltage

100

+20

3.2

2.5

Gate-Source Voltage

+20

-3.2

-2.5

-10

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

P_D@T_A=25℃

T_STG

Total Power Dissipation⁴

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient⁴

℃/W

201811301

12 3 4 5 6 7...10

中文翻译

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