Datasheet > AP10A250YT

AP10A250YT

更新时间： 2024-11-09 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	70K
描述
PMPAK-3x3

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中文翻译

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数据手册

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AP10A250YT 数据手册

AP10A250YT

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

100V

250mΩ

2.1A

▼ Fast Switching Characteristic

R_DS(ON)

▼ RoHS Compliant & Halogen-Free

I_D

D1 D1 D2 D2

Description

PMPAK^®3x3

AP10A250 series are from Advanced Power innovated

design and silicon process technology to achieve the

lowest possible on-resistance and fast switching

performance. It provides the designer with an extreme

efficient device fo

The PMPAK

3x3 package is special for voltage

S1 G1 S2 G2

conversion application using standard infrared reflow

technique with the backside heat sink to achieve the

good thermal performance.

Absolute Maximum Ratings@T=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

2.1

1.7

P_D@T_A=25℃

T_STG

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

2.5

℃

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Units

℃/W

Rating

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

201808211

12 3 4 5

中文翻译

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