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AP10A045YT PDF预览

AP10A045YT

更新时间: 2024-09-21 17:15:47
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 237K
描述
PMPAK-3x3

AP10A045YT 数据手册

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AP10A045YT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1  
Simple Drive Requirement  
BVDSS  
100V  
45mΩ  
5.4A  
Fast Switching Characteristic  
RDS(ON)  
D2  
3
RoHS Compliant & Halogen-Free  
ID  
S1  
G1  
S2  
G2  
D1 D1 D2 D2  
Description  
PMPAK® 3x3  
AP10A045 series are from Advanced Power innovated  
design and silicon process technology to achieve the  
lowest possible on-resistance and fast switching  
performance. It provides the designer with an extreme  
efficient device for use in a wide range of power  
applications.  
S1 G1 S2 G2  
®
The PMPAK  
3x3 package is special for voltage  
conversion application using standard infrared reflow  
technique with the backside heat sink to achieve the  
good  
thermal  
performance.  
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
5.4  
A
4.3  
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
2.5  
W
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Units  
/W  
/W  
Rating  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
8
Rthj-a  
50  
1
202110191