AP10A045YT
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
▼ Simple Drive Requirement
BVDSS
100V
45mΩ
5.4A
▼ Fast Switching Characteristic
RDS(ON)
D2
3
▼ RoHS Compliant & Halogen-Free
ID
S1
G1
S2
G2
D1 D1 D2 D2
Description
PMPAK® 3x3
AP10A045 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
performance. It provides the designer with an extreme
efficient device for use in a wide range of power
applications.
S1 G1 S2 G2
®
The PMPAK
3x3 package is special for voltage
conversion application using standard infrared reflow
technique with the backside heat sink to achieve the
good
thermal
performance.
o
.
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
ID@TA=25℃
ID@TA=70℃
IDM
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
5.4
A
4.3
A
20
A
PD@TA=25℃
TSTG
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2.5
W
℃
℃
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Units
℃/W
℃/W
Rating
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
8
Rthj-a
50
1
202110191