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AP10A035MT PDF预览

AP10A035MT

更新时间: 2024-11-11 17:15:51
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 236K
描述
PMPAK-5x6

AP10A035MT 数据手册

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AP10A035MT  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D1 D1 D2 D2  
Simple Drive Requirement  
BVDSS  
100V  
Fast Switching Characteristic  
RDS(ON)  
35mΩ  
RoHS Compliant & Halogen-Free  
D1  
D1  
D2  
D2  
Description  
S1 G1 S2 G2  
AP10A035 series are from Advanced Power innovated  
design and silicon process technology to achieve the  
lowest possible on-resistance and fast switching  
performance. It provides the designer with an extreme  
efficient device for use in a wide range of power  
applications.  
S1  
G1  
S2  
G2  
®
PMPAK® 5x6  
PMPAK  
5x6 dual pad provide superior thermal  
performance and is design for surface mount applications.  
Absolute Maximum Ratings@T=25oC(unless otherwise specified)  
.
j
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
100  
Gate-Source Voltage  
+20  
V
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Drain Current, VGS @ 10V  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
17.7  
A
7.3  
A
5.8  
A
30  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
3.57  
W
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Units  
/W  
/W  
Rating  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
6
Rthj-a  
35  
1
202103021