Datasheet > AP09T10GK-HF

AP09T10GK-HF

更新时间： 2024-11-20 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
2页	44K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP09T10GK-HF 数据手册

AP09T10GK-HF

Preliminary

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

300mΩ

2.4A

▼ Lower Gate Chage

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

The Advanced Power MOSFETs from APEC provide the

best combination of fast switching, ruggedized device design, low on-

designer with the best combination of fast switching,

resistance and cost-effectiveness.

SOT-223

ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for suface mount application, larger

heatsink than SO-8 and SOT package.

Absolute Maximum Ratings

Symbol

Parameter

Rating

100

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

2.4

1.9

P_D@T_A=25℃

T_STG

Total Power Dissipation³

2.78

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

℃/W

Data and specifications subject to change without notice

20110824pre

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