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AP09N90CW-HF PDF预览

AP09N90CW-HF

更新时间: 2024-11-20 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 65K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N90CW-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-3P包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.69Is Samacsys:N
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):7.6 A
最大漏源导通电阻:1.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):25 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP09N90CW-HF 数据手册

 浏览型号AP09N90CW-HF的Datasheet PDF文件第2页浏览型号AP09N90CW-HF的Datasheet PDF文件第3页浏览型号AP09N90CW-HF的Datasheet PDF文件第4页 
AP09N90CW-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Minimize On-resistance  
BVDSS  
RDS(ON)  
ID  
900V  
1.4Ω  
7.6A  
D
S
Fast Switching  
Simple Drive Requirement  
RoHS Compliant & Halogen-Free  
G
Description  
AP09N90C provides minimize on-state resistance , superior switching  
performance and high efficiency switching power supply applications.  
TO-3P package is preferred for commercial-industrial applications and  
provides greater distance between pins to meet the requirements of  
most safety specifications.  
G
D
S
TO-3P  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
900  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+30  
7.6  
4.8  
25  
V
A
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
A
PD@TC=25℃  
Total Power Dissipation  
208  
1.6  
120  
6
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
0.6  
40  
Rthj-a  
Data & specifications subject to change without notice  
1
200912163  

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