Datasheet > AP04N70BI_09

AP04N70BI_09

更新时间： 2024-11-01 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	110K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP04N70BI_09 数据手册

AP04N70BI

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

600V

2.4Ω

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for all

commercial-industrial through hole applications.

TO-220CFM(I)

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

+30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

2.5

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.26

W/℃

E_AS

I_AR

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3.8

Rthj-a

Data & specifications subject to change without notice

200906243

12 3 4 5 6

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