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AP04N70BI-H PDF预览

AP04N70BI-H

更新时间: 2024-11-01 20:50:03
品牌 Logo 应用领域
富鼎先进 - A-POWER 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 106K
描述
TRANSISTOR 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power

AP04N70BI-H 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.65
雪崩能效等级(Eas):8 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:700 V
最大漏极电流 (ID):4 A最大漏源导通电阻:2.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP04N70BI-H 数据手册

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AP04N70BI-H  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
700V  
2.4Ω  
4A  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM package is widely preferred for commercial-industrial  
applications. The device is suited for switch mode power supplies, DC-  
AC converters and high current high speed switching circuits.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
700  
+30  
4
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
2.5  
15  
A
A
PD@TC=25℃  
Total Power Dissipation  
33  
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
0.26  
8
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
4
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.8  
65  
Rthj-a  
Data & specifications subject to change without notice  
1
200906254  

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