Datasheet > AP04N60I-A

AP04N60I-A

更新时间： 2024-10-31 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	65K
描述
TO-220CFM

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AP04N60I-A 数据手册

AP04N60I-A-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

650V

2.5Ω

▼ Fast Switching Characteristic

R_DS(ON)

▼ Simple Drive Requirement

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP04N60 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-220CFM(I)

The TO-220CFM package is widely preferred for all commercial-

industrial through hole applications. The mold compound provides

a high isolation voltage capability and low thermal resistance

between the tab and the external heat-sink.

Absolute Maximum Ratings@T_j=25 C(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

650

Gate-Source Voltage

+30

I_D@T_C=25℃

Drain Current, V_GS@ 10V⁴

Pulsed Drain Current¹

I_D@T_C=100℃

2.2

I_DM

36.8

P_D@T_C=25℃

Total Power Dissipation

P_D@T_A=25℃

Total Power Dissipation

Single Pulse Avalanche Energy³

1.92

E_AS

I_AR

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3.4

Rthj-a

Data & specifications subject to change without notice

201501082

12 3 4 5

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